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Effects of Equivalent-Oxide-Thickness and Fin-Width Scaling on In0.53Ga0.47As Tri-Gate Metal-Oxide-Semiconductor-Field-Effect-Transistors with Al2O3/HfO2 for Low-Power Logic Applications

School of Electrical Engineering, University of Ulsan, Ulsan 44610, Korea
Electronics 2020, 9(1), 29; https://doi.org/10.3390/electronics9010029
Received: 6 December 2019 / Revised: 24 December 2019 / Accepted: 24 December 2019 / Published: 26 December 2019
(This article belongs to the Section Microelectronics and Optoelectronics)
We created tri-gate sub-100 nm In0.53Ga0.47As metal-oxide-semiconductor-field-effect-transistors (MOSFETs) with a bi-layer Al2O3/HfO2 gate stack and investigated the scaling effects on equivalent-oxide-thickness (EOT) and fin-width (Wfin) at gate lengths of sub-100 nm. For Lg = 60 nm In0.53Ga0.47As tri-gate MOSFETs, EOT and Wfin scaling were effective for improving electrostatic immunities such as subthreshold swing and drain-induced-barrier-lowering. Reliability characterization for In0.53Ga0.47As Tri-Gate MOSFETs using constant-voltage-stress (CVS) at 300K demonstrates slightly worse VT degradation compared to planar InGaAs MOSFET with the same gate stack and EOT. This is due to the effects of both of the etched fin’s sidewall interfaces. View Full-Text
Keywords: Tri-gate In0.53Ga0.47As MOSFET; electrostatic immunity; drain-induced-barrier-lowering (DIBL), constant voltage stress (CVS), equivalent-oxide thickness (EOT) Tri-gate In0.53Ga0.47As MOSFET; electrostatic immunity; drain-induced-barrier-lowering (DIBL), constant voltage stress (CVS), equivalent-oxide thickness (EOT)
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Kim, T.-W. Effects of Equivalent-Oxide-Thickness and Fin-Width Scaling on In0.53Ga0.47As Tri-Gate Metal-Oxide-Semiconductor-Field-Effect-Transistors with Al2O3/HfO2 for Low-Power Logic Applications. Electronics 2020, 9, 29.

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